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參數(shù)資料
| 型號(hào)： | HY62LF16206A |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 128Kx16bit full CMOS SRAM |
| 中文描述： | 128Kx16bit充分的CMOS的SRAM |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 283K |
| 代理商： | HY62LF16206A |
HY62LF16206A-LT12C
TIMING DIAGRAM
READ CYCLE 1(Note 1,4)
READ CYCLE 2(Note 2,3,4)
Rev.05 /Apr. 2002
5
READ CYCLE 3(Note 1,2,4)
/CS1
/UB, /LB
ADDR
Data
Out
tRC
tAA
Data Valid
Previous Data
tOH
tOH
Notes:
1. A read occurs during the overlap of a low /OE, a high /WE, a low /CS1, a high CS2 and low /UB
and/or /LB.
2. /OE = V
IL
3. Transition is measured + 200mV from steady state voltage.
This parameter is sampled and not 100% tested.
4. /CS1 in high for the standby, low for active. CS2 in low for the standby, high for active.
/UB and /LB in high for the standby, low for active
tACS
Data Valid
tCLZ(3)
tCHZ(3)
Data
Out
CS2
Data Valid
High-Z
ADDR
Data
Out
tRC
/CS1
CS2
/UB ,/ LB
/OE
tAA
tACS
tBA
tOE
tCLZ
(3)
tBLZ
(3)
tOLZ
(3)
tOH
tCHZ
(3)
tBHZ
(3)
tOHZ
(3)
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| HY62SF16101CSLF | HY62SF16101C Series 64Kx16bit full CMOS SRAM |
| HY62SF16101CSLF-I | HY62SF16101C Series 64Kx16bit full CMOS SRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY62LF16206A-LT12C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| HY62LF16206B | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Kx16bit full CMOS SRAM |
| HY62LF16206B-DT12C | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Kx16bit full CMOS SRAM |
| HY62LF16404C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16|2.5V|70/85|Super Low Power Slow SRAM - 4M |
| HY62LF16404C-DM | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Kx16bit full CMOS SRAM |
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