參數(shù)資料
型號: HY62LF16206A
廠商: Hynix Semiconductor Inc.
英文描述: 128Kx16bit full CMOS SRAM
中文描述: 128Kx16bit充分的CMOS的SRAM
文件頁數(shù): 5/11頁
文件大?。?/td> 283K
代理商: HY62LF16206A
HY62LF16206A-LT12C
AC CHARACTERISTICS
Vcc = 2.3V~2.7V, T
A
= 0
°
C to 70
°
C, unless otherwise specified
READ CYCLE
1
tRC
Read Cycle Time
2
tAA
Address Access Time
3
tACS
Chip Select Access Time
4
tOE
Output Enable to Output Valid
5
tBA
/LB, /UB Access Time
6
tCLZ
Chip Select to Output in Low Z
7
tOLZ
Output Enable to Output in Low Z
8
tBLZ
/LB, /UB Enable to Output in Low Z
9
tCHZ
Chip Deselection to Output in High Z
10
tOHZ
Out Disable to Output in High Z
11
tBHZ
/LB, /UB Disable to Output in High Z
12
tOH
Output Hold from Address Change
WRITE CYCLE
13
tWC
Write Cycle Time
14
tCW
Chip Selection to End of Write
15
tAW
Address Valid to End of Write
16
tBW
/LB, /UB Valid to End of Write
17
tAS
Address Set-up Time
18
tWP
Write Pulse Width
19
tWR
Write Recovery Time
20
tWHZ
Write to Output in High Z
21
tDW
Data to Write Time Overlap
22
tDH
Data Hold from Write Time
23
tOW
Output Active from End of Write
AC TEST CONDITIONS
T
A
= 0
°
C to 70
°
C, unless otherwise specified
Parameter
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Level
tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW
Output Load
Others
AC TEST LOADS
Rev.05 /Apr. 2002
4
-12
Min.
Max.
Unit
120
-
-
-
-
10
5
10
0
0
0
10
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
120
120
80
120
-
-
-
45
45
45
-
120
100
100
100
0
85
0
0
60
0
10
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
35
-
-
-
Value
0.4V to 2.2V
5ns
1.1V
CL = 5pF + 1TTL Load
CL = 30pF + 1TTL Load
Note :
1. Including jig and scope capacitance
CL(1)
TTL
Symbol
Parameter
#
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