參數(shù)資料
型號: HY62LF16206A
廠商: Hynix Semiconductor Inc.
英文描述: 128Kx16bit full CMOS SRAM
中文描述: 128Kx16bit充分的CMOS的SRAM
文件頁數(shù): 3/11頁
文件大?。?/td> 283K
代理商: HY62LF16206A
HY62LF16206A-LT12C
ORDERING INFORMATION
Part No.
HY62LF16206A-LT12C
ABSOLUTE MAXIMUM RATINGS (1)
Symbol
V
IN,
V
OUT
Input/Output Voltage
Vcc
Power Supply
T
A
Operating Temperature
T
STG
Storage Temperature
P
D
Power Dissipation
T
SOLDER
Ball Soldering Temperature & Time
Note :
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
Rev.05 /Apr. 2002
2
Speed
120
Power
L-part
Temp.
0
é
~ 70
é
Package
48-TSOP1
Parameter
Rating
Unit
V
V
°
C
°
C
W
°
C
sec
Remark
-0.3 to 3.3
-0.3 to 3.3
0 to 70
-40 to 125
1.0
260
10
I/O
/CS1
CS2
/WE
/OE
/LB
/UB
Mode
I/O1~I/O8
High-Z
High-Z
High-Z
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
High-Z
D
IN
I/O9~I/O16
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
D
OUT
D
OUT
High-Z
D
IN
D
IN
Power
H
X
X
L
L
L
L
X
L
X
H
H
H
H
X
X
X
H
H
H
L
X
X
X
H
H
L
X
X
X
H
L
X
L
H
L
L
H
L
X
X
H
X
L
H
L
L
H
L
L
Deselected
Standby
Output Disabled
Read
Write
Active
Note:
1. H=V
IH
, L=V
IL
, X=don't care(Vil or Vih)
2. UB, LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When LB is LOW, data is written or read to the lower byte, I/O 1 -I/O 8.
When UB is LOW, data is written or read to the upper byte, I/O 9 -I/O 16.
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