參數(shù)資料
型號(hào): HY62LF16206A
廠商: Hynix Semiconductor Inc.
英文描述: 128Kx16bit full CMOS SRAM
中文描述: 128Kx16bit充分的CMOS的SRAM
文件頁(yè)數(shù): 2/11頁(yè)
文件大?。?/td> 283K
代理商: HY62LF16206A
HY62LF16206A-LT12C
DESCRIPTION
The HY62LF16206A is a high speed, super low
power and 2Mbit full CMOS SRAM organized as
128K words by 16bits. The HY62LF16206A uses
high performance full CMOS process technology
and is designed for high speed and low power
circuit technology. It is particularly well-suited for
the high density low power system application.
This device has a data retention mode that
guarantees data to remain valid at a minimum
power supply voltage of 1.2V.
Product
Voltage
No.
HY62LF16206A
2.3~2.7
Notes :
1. Current value is max.
PIN CONNECTION BLOCK DIAGRAM
48-TSOP1(Forward)
PIN CONNECTION
Pin Name
Pin Function
/CS1
Chip Select 1
CS2
Chip Select 2
/WE
Write Enable
/OE
Output Enable
/LB
Lower Byte Control(I/O1~I/O8)
/UB
Upper Byte Control(I/O9~I/O16)
Rev.05 /Apr. 2002
2
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup(L-part)
-. 1.2V(min) data retention
Standard pin configuration
-. 48-TSOP1(12mm X 14mm, 12mm X 18mm)
Speed
(ns)
120
Operation
Current/Icc(mA)
3
Standby Current(uA)
L
100
Temperature
(
°
C)
0~70
(V)
Pin Name
I/O1~I/O16
A0~A16
Vcc
Vss
NC
Pin Function
Data Inputs / Outputs
Address Inputs
Power(2.3V~2.7V)
Ground
No Connection
MEMORY ARRAY
128K x 16
ROW
DECODER
S
W
D
B
I/O1
I/O16
C
C
L
A
A0
A16
CS2
/OE
/LB
/UB
/WE
/CS1
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
/WE
CS2
NC
/UB
/LB
NC
NC
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
NC
VSS
IO16
IO8
IO15
IO7
IO14
IO6
IO13
IO5
VCC
IO12
IO4
IO11
IO3
IO10
IO2
IO9
IO1
/OE
VSS
/CS1
A0
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