參數(shù)資料
型號： HUFA76404DK8T
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： N-Channel Dual MOSFET
中文描述： 3.6 A, 62 V, 0.11 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁數(shù)： 9/12頁
文件大?。?/td> 652K
代理商： HUFA76404DK8T
HUFA76404DK8T Rev. B
www.fairchildsemi.com
9
H
PSPICE Electrical Model
.SUBCKT HUFA76404DK8T 2 1 3 ;
Ca 12 8 3.8e-10
Cb 15 14 3.8e-10
Cin 6 8 2.6e-10
rev March 2004
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 62.5
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
Lgate 1 9 2.22e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 0.93e-9
RLgate 1 9 22.2
RLdrain 2 5 10
RLsource 3 7 9.3
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 2.4e-2
Rgate 9 20 103.3
RSLC1 5 51 RSLCMOD 1.0e-6
RSLC2 5 50 1.0e3
Rsource 8 7 RsourceMOD 5.4e-2
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*18),3.7))}
.MODEL DbodyMOD D (IS=1.1E-12 N=1.03 RS=2.7e-2 TRS1=5.0e-4 TRS2=1.3e-6
+ CJO=6.82e-10 M=0.85 TT=1.6e-8 XTI=4.0)
.MODEL DbreakMOD D (RS=1.65 TRS1=1.0e-3 TRS2=-9e-6)
.MODEL DplcapMOD D (CJO=1.7e-10 IS=1.0e-30 N=10 M=0.85)
.MODEL MstroMOD NMOS (VTO=2.13 KP=19 IS=1e-30 N=10 TOX=1 L=1u W=1u T_ABS=25)
.MODEL MmedMOD NMOS (VTO=1.81 KP=1.08 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=103.3 T_ABS=25)
.MODEL MweakMOD NMOS (VTO=1.59 KP=0.04 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=103.3e1 RS=0.1 T_ABS=25)
.MODEL RbreakMOD RES (TC1=1.12e-3 TC2=-3e-7)
.MODEL RdrainMOD RES (TC1=1.0e-2 TC2=5e-5)
.MODEL RSLCMOD RES (TC1=2.8e-3 TC2=1.9e-5)
.MODEL RsourceMOD RES (TC1=4e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-2.1e-3 TC2=-3.3e-6)
.MODEL RvtempMOD RES (TC1=-1.6e-3 TC2=1.0e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-1)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1 VOFF=-4)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.5 VOFF=0.5)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.5 VOFF=-0.5)
.ENDS
Note: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
19
VBAT
RVTHRES
IT
17
18
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUFA76404DK8T_SB82047 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUFA76407D3 功能描述:MOSFET 11a 60V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA76407D3S 功能描述:MOSFET 11a 60V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA76407D3ST 功能描述:MOSFET 11a 60V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA76407DK8 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
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