參數(shù)資料
型號(hào): HUFA76404DK8T
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: N-Channel Dual MOSFET
中文描述: 3.6 A, 62 V, 0.11 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數(shù): 8/12頁
文件大?。?/td> 652K
代理商: HUFA76404DK8T
HUFA76404DK8T Rev. B
www.fairchildsemi.com
8
H
Test Circuits and Waveforms
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveforms
Figure 19. Switching Time Test Circuit
Figure 20. Switching Time Waveforms
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
+
-
V
DS
V
DD
DUT
I
g(REF)
R
L
V
DD
Q
g(TH)
Q
gs
V
GS
= 1V
0
Q
gs2
Q
g(TOT)
V
GS
= 5V
V
DS
V
GS
I
g(REF)
0
Q
gd
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUFA76404DK8T_SB82047 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUFA76407D3 功能描述:MOSFET 11a 60V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA76407D3S 功能描述:MOSFET 11a 60V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA76407D3ST 功能描述:MOSFET 11a 60V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA76407DK8 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET