參數(shù)資料
型號： HUFA76404DK8T
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： N-Channel Dual MOSFET
中文描述： 3.6 A, 62 V, 0.11 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁數(shù)： 2/12頁
文件大?。?/td> 652K
代理商： HUFA76404DK8T
HUFA76404DK8T Rev. B
www.fairchildsemi.com
2
H
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
V
GS(TH)
Dynamic Characteristics
Symbol
V
DSS
V
GS
Parameter
Ratings
62
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
θ
JA
= 50
o
C/W)
Continuous (T
A
= 25
o
C, V
GS
= 5V, R
θ
JA
= 50
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
3.6
3.2
A
A
A
Figure 4
128
2.5
20
-55 to 150
E
AS
mJ
W
P
D
mW/
o
C
o
C
T
J
, T
STG
R
θ
JA
R
θ
JA
R
θ
JA
Pad Area = 0.50 in
2
(323 mm
2
) (Note 2)
Pad Area = 0.027 in
2
(17.4 mm
2
) (Note 3)
Pad Area = 0.006 in
2
(3.87 mm
2
) (Note 4)
50
170
183
o
C/W
o
C/W
o
C/W
Device Marking
76404DK8
Device
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
HUFA76404DK8T
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V
V
DS
= 50V, V
GS
= 0V,
T
A
= 150
o
C
V
GS
=
±
20V
62
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
-
-
250
I
GSS
Gate to Source Leakage Current
-
-
±
100
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 3.6A, V
GS
= 10V
I
D
= 3.2A, V
GS
= 5V
1
-
-
-
3
V
r
DS(ON)
Drain to Source On Resistance
0.088
0.110
0.110
0.132
C
ISS
C
OSS
C
RSS
R
G
Q
g(tot)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
-
250
80
7
100
3.8
0.3
0.8
0.5
1.7
-
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0.5V, f = 1MHz
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 30V
I
D
= 3.6A
I
g
= 1.0mA
4.9
0.4
-
-
-
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