- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385409 > HUFA76404DK8T (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Dual MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | HUFA76404DK8T |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Dual MOSFET |
| 中文描述： | 3.6 A, 62 V, 0.11 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 652K |
| 代理商： | HUFA76404DK8T |
HUFA76404DK8T Rev. B
www.fairchildsemi.com
3
H
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
= 25°C, L = 41mH, I
= 2.5A, V
= 62V, V
= 10V.
2:
50
C/W measured using FR-4 board with 0.50 in
(323 mm
) copper pad at 1 second.
3:
170
C/W measured using FR-4 board with 0.027 in
(17.4 mm
) copper pad at 1000 seconds.
4:
183
o
C/W measured using FR-4 board with 0.006 in
2
(3.87 mm
2
) copper pad at 1000 seconds.
V
DD
= 30V, I
D
= 3.6A
V
GS
= 10V, R
GS
= 47
-
-
-
-
-
-
-
65
-
-
-
-
330
ns
ns
ns
ns
ns
ns
13
26
145
53
-
V
SD
Source to Drain Diode Voltage
I
SD
= 3.6A
I
SD
= 1.8A
I
SD
= 3.6A, dI
SD
/dt= 100A/
μ
s
I
SD
= 3.6A, dI
SD
/dt= 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
37
38
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certificatio
n.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUM-40 | HOLD UP MODULE 28 VOLT INPUT |
| HUN2111 | PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network |
| HUN2112 | PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network |
| HUN2113 | PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network |
| HUN2114 | PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUFA76404DK8T_SB82047 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HUFA76407D3 | 功能描述:MOSFET 11a 60V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76407D3S | 功能描述:MOSFET 11a 60V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76407D3ST | 功能描述:MOSFET 11a 60V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76407DK8 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。