參數(shù)資料
型號： HUFA76404DK8T
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： N-Channel Dual MOSFET
中文描述： 3.6 A, 62 V, 0.11 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁數(shù)： 10/12頁
文件大?。?/td> 652K
代理商： HUFA76404DK8T
HUFA76404DK8T Rev. B
www.fairchildsemi.com
10
H
SABER Electrical Model
REV March 2004
template HUFA76404DK8T n2,n1,n3=m_temp
number m_temp=25
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=1.1e-12,nl=1.03,rs=2.7e-2,trs1=5.0e-4,trs2=1.3e-6,cjo=6.82e-10,m=0.85,tt=1.6e-8,xti=4.0)
dp..model dbreakmod = (rs=1.65,trs1=1.0e-3,trs2=-9e-6)
dp..model dplcapmod = (cjo=1.7e-10,isl=10.0e-30,nl=10,m=0.85)
m..model mstrongmod = (type=_n,vto=2.13,kp=19,is=1e-30, tox=1)
m..model mmedmod = (type=_n,vto=1.81,kp=1.08,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=1.59,kp=0.04,is=1e-30, tox=1,rs=0.1)
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4,voff=-1)
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-1,voff=-4)
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-0.5,voff=0.5)
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=0.5,voff=-0.5)
c.ca n12 n8 = 3.8e-10
c.cb n15 n14 = 3.8e-10
c.cin n6 n8 = 2.6e-10
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
spe.ebreak n11 n7 n17 n18 = 62.5
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
i.it n8 n17 = 1
l.lgate n1 n9 = 2.22e-9
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 0.93e-9
res.rlgate n1 n9 = 22.2
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 9.3
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u, temp=m_temp
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u, temp=m_temp
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u, temp=m_temp
res.rbreak n17 n18 = 1, tc1=1.12e-3,tc2=-3e-7
res.rdrain n50 n16 = 2.4e-2, tc1=1.8e-2,tc2=5e-5
res.rgate n9 n20 = 103.3
res.rslc1 n5 n51 = 1.0e-6, tc1=2.8e-3,tc2=1.9e-5
res.rslc2 n5 n50 = 1.0e3
res.rsource n8 n7 = 5.4e-2, tc1=4e-3,tc2=1e-6
res.rvthres n22 n8 = 1, tc1=-2.1e-3,tc2=-3.3e-6
res.rvtemp n18 n19 = 1, tc1=-1.6e-3,tc2=1e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/18))** 3.7))
}
18
22
+
-
6
8
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
19
VBAT
RVTHRES
IT
17
18
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ISCL
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUFA76404DK8T_SB82047 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUFA76407D3 功能描述:MOSFET 11a 60V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA76407D3S 功能描述:MOSFET 11a 60V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA76407D3ST 功能描述:MOSFET 11a 60V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA76407DK8 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
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