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參數(shù)資料
| 型號： | HSD669A |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 34K |
| 代理商： | HSD669A |
HI-SINCERITY
MICROELECTRONICS CORP.
HSD669A
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6630
Issued Date : 1995.12.18
Revised Date : 2002.05.03
Page No. : 1/3
HSD669A
HSMC Product Specification
Description
Low frequency power amplifier complementary pair with HSB649A
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.....................................................................................+150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)....................................................................................... 1 W
Total Power Dissipation (Tc=25
°
C) ..................................................................................... 20 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 180 V
BVCEO Collector to Emitter Voltage.................................................................................. 160 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current (DC) .................................................................................................. 1.5 A
IC Collector Current (Pulse) ................................................................................................. 3 A
Electrical Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
180
160
5
-
-
-
100
30
-
-
Typ.
-
-
-
-
-
-
-
-
140
14
Max.
-
-
-
10
1
1.5
320
-
-
-
Unit
V
V
V
uA
V
V
Test Conditions
IC=1mA, IE=0
IC=10mA, IB=0
IE=1mA, IC=0
VCB=160V, IE=0
IC=500mA, IB=50mA
IC=150mA, VCE=5V
IC=150mA, VCE=5V
IC=500mA, VCE=5V
IC=150mA , VCE=5V
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hFE1
Rank
Range
C
D
100-200
180-320
TO-126ML
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