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| 型號(hào)： | HSD879D |
| 廠商： | HSMC CORP. |
| 英文描述： | ; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):Yes |
| 中文描述： | npn型硅外延型晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 32K |
| 代理商： | HSD879D |
HI-SINCERITY
MICROELECTRONICS CORP.
HSD879D
SILICON NPN EPITAXIAL TYPE TRANSISTOR
Spec. No. : HD200203
Issued Date : 1996.07.15
Revised Date : 2002.02.26
Page No. : 1/3
HSD879D
HSMC Product Specification
Description
For 1.5V and 3v electronic flash use.
Features
Charger-up time is about 1 ms faster than of a germanium transistor.
Small saturation voltage can bring less power dissipation and flashing times.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C).................................................................................... 1.4 W
Maximum Voltages and Currents (Ta=25
°
C)
BVCBO Collector to Base Voltage....................................................................................... 30 V
BVCEX Collector to Emitter Voltage.................................................................................... 20 V
BVCEO Collector to Emitter Voltage.................................................................................... 10 V
BVEBO Emitter to Base Voltage............................................................................................ 6 V
IC Collector Current .............................................................................................................. 3 A
IC Collector Current (Pluse) .................................................................................................. 5 A
Characteristics
(Ta=25
°
C)
Symbol
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE
*hFE
fT
Cob
Min.
10
6
-
-
-
-
140
-
-
Typ.
-
-
-
-
0.3
0.83
210
200
30
Max.
-
-
100
100
0.4
1.5
-
-
-
Unit
V
V
nA
nA
V
V
Test Condition
IC=1mA
IE=10uA
VCB=20V
VBE=4V
IC=3A, IB=60mA
VCE=-1V, IC=-2A
VCE=2V, IC=3A
VCE=10V, IC=50mA
VCB=10V, f=1KHZ
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHZ
pF
TO-126ML
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