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參數(shù)資料
| 型號(hào)： | HSD882S |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 42K |
| 代理商： | HSD882S |
HI-SINCERITY
MICROELECTRONICS CORP.
HSD882S
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6544
Issued Date : 1992.11.25
Revised Date : 2002.01.25
Page No. : 1/4
HSD882S
HSMC Product Specification
Description
The HSD882S is suited for the output stage of 0.75W audio, voltage
regulator, and relay driver.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature...................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 750 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 40 V
VCEO Collector to Emitter Voltage...................................................................................... 30 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current............................................................................................................... 3 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
40
30
5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-
-
-
-
90
45
Max.
-
-
-
1
1
0.5
2
-
500
-
-
Unit
V
V
V
uA
uA
V
V
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=30V, IE=0
VEB=3V, IC=0
IC=2A, IB=200mA
IC=2A, IB=200mA
VCE=2V, IC=20mA
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification of hFE
Rank
Range
Q
P
E
100-200
160-320
250-500
TO-92
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