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參數(shù)資料
| 型號(hào)： | HSD879 |
| 廠商： | HSMC CORP. |
| 英文描述： | TAP SWITCHES |
| 中文描述： | npn型硅外延型晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 30K |
| 代理商： | HSD879 |
HI-SINCERITY
MICROELECTRONICS CORP.
HSD879
SILICON NPN EPITAXIAL TYPE TRANSISTOR
Spec. No. : HA200207
Issued Date : 1996.07.15
Revised Date : 2002.02.25
Page No. : 1/3
HSD879
HSMC Product Specification
Description
For 1.5V and 3v electronic flash use.
Features
Charger-up time is about 1 ms faster than of a germanium transistor
Small saturation voltage can bring less power dissipation and flashing times
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 750 mW
Maximum Voltages and Currents (Ta=25
°
C)
BVCBO Collector to Base Voltage....................................................................................... 30 V
BVCEX Collector to Emitter Voltage.................................................................................... 20 V
BVCEO Collector to Emitter Voltage.................................................................................... 10 V
BVEBO Emitter to Base Voltage............................................................................................ 6 V
IC Collector Current............................................................................................................... 3 A
IC Collector Current (Pluse) .................................................................................................. 5 A
Electrical Characteristics
(Ta=25
°
C)
Symbol
BVCEO
BVEBO
BVCBO
BVCEX
ICBO
IEBO
*hFE
*VCE(sat)
fT
Cob
Min.
10
6
30
20
-
-
140
-
-
-
Typ.
-
-
-
-
-
-
210
0.3
200
30
Max.
-
-
-
-
100
100
400
0.4
-
-
Unit
V
V
V
V
nA
nA
Test Condition
IC=1mA
IE=10uA
IC=10uA
IC=1mA, VBE=3V
VCB=20V
VBE=4V
VCE=2V, IC=3A
IC=3A, IB=60mA
VCE=10V, IC=50mA
VCB=10V, f=1MHZ
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
V
MHZ
pF
TO-92
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| HSD879D | 制造商:HSMC 制造商全稱:HSMC 功能描述:SILICON NPN EPITAXIAL TYPE TRANSISTOR |
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| HSD882S | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
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