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參數(shù)資料
| 型號： | HSD880 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 34K |
| 代理商： | HSD880 |
HI-SINCERITY
MICROELECTRONICS CORP.
HSD880
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6729-B
Issued Date : 1992.11.25
Revised Date : 1999.08.01
Page No. : 1/3
HSMC Product Specification
Description
The HSD880 is designed for low frequency power amplifier
applications.
Features
High DC Current Gain
High Power Dissipation: PC=30W at TC=25
°
C
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -50 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) .................................................................................... 30 W
Total Power Dissipation (Ta=25
°
C)................................................................................... 1.5 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... 60 V
BVCEO Collector to Emitter Voltage................................................................................... 60 V
BVEBO Emitter to Base Voltage........................................................................................... 7 V
IC Collector Current.............................................................................................................. 3 A
IB Base Current................................................................................................................. 0.5 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
ICBO
IEBO
*VCE(sat)
*VBE(on)
*hFE
fT
Min.
60
60
-
-
-
-
60
-
Typ.
-
-
-
-
-
-
-
3
Max.
-
-
100
100
1
1
300
-
Unit
V
V
uA
uA
V
V
Test Conditions
IC=1mA, IE=0
IC=50mA, IB=0
VCB=60V, IE=0
VEB=7V, IC=0
IC=3A, IB=0.3A
IC=0.5A, VCE=5V
IC=0.5A, VCE=5V
IC=500mA, VCE=5V
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
Classification Of hFE
Rank
Range
O
Y
GR
60-120
100-200
150-300
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