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參數資料
| 型號： | HSD882 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 40K |
| 代理商： | HSD882 |
HI-SINCERITY
MICROELECTRONICS CORP.
HSD882
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6004
Issued Date : 1998.03.15
Revised Date : 2002.01.25
Page No. : 1/4
HSD882
HSMC Product Specification
Description
The HSD882 is designed for using in output stage of 1w audio
amplifier, voltage regulator, DC-DC converter and relay driver.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)....................................................................................... 1 W
Total Power Dissipation (Tc=25
°
C) ..................................................................................... 10 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................... 40 V
BVCEO Collector to Emitter Voltage.................................................................................... 30 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current (DC)...................................................................................................... 3 A
IC Collector Current (Pulse) ................................................................................................. 7 A
IB Base Current (DC) ......................................................................................................... 0.6 A
Electrical Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
40
30
5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
0.3
1
150
200
90
45
Max.
-
-
-
1
1
0.5
2
-
500
-
-
Unit
V
V
V
uA
uA
V
V
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=30V
VEB=3V
IC=2A, IB=0.2A
IC=2A, IB=0.2A
IC=20mA, VCE=2V
IC=1A, VCE=2V
IC=0.1A, VCE=5V
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hFE2
Rank
Range
Q
P
E
100-200
160-320
250-500
TO-126ML
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