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參數(shù)資料
| 型號(hào)： | HSD667A |
| 廠商： | HSMC CORP. |
| 英文描述： | SILICON NPN EPITAXIAL |
| 中文描述： | npn型硅外延 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | HSD667A |
HI-SINCERITY
MICROELECTRONICS CORP.
HSD667A
SILICON NPN EPITAXIAL
Spec. No. : HE6510-B
Issued Date : 1996.07.15
Revised Date : 2000.10.01
Page No. : 1/4
HSMC Product Specification
Description
Low Frequency Power Amplifier Complementary Pair With
HSB647A.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature..................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 900 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ...................................................................................... 120 V
VCEO Collector to Emitter Voltage................................................................................... 100 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current (DC)...................................................................................................... 1 A
IC Collector Current (Pulse).................................................................................................. 2 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
120
100
5
-
-
-
60
30
-
-
Typ.
-
-
-
-
-
-
-
-
140
12
Max.
-
-
-
10
1
1.5
200
-
-
-
Unit
V
V
V
uA
V
V
Test Conditions
IC=10uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=100V, IE=0
IC=500mA, IB=50mA
VCE=5V, IC=150mA
VCE=5V, IC=150mA
VCE=5V, IC=500mA
VCE=5V, IC=150mA
VCB=10V, f=1MHz, IE=0
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification of hFE
Rank
Range
B
C
60-120
100-200
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HSD669A | 制造商:HSMC 制造商全稱(chēng):HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| HSD879 | 制造商:HSMC 制造商全稱(chēng):HSMC 功能描述:SILICON NPN EPITAXIAL TYPE TRANSISTOR |
| HSD879D | 制造商:HSMC 制造商全稱(chēng):HSMC 功能描述:SILICON NPN EPITAXIAL TYPE TRANSISTOR |
| HSD88 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述: |
| HSD880 | 制造商:HSMC 制造商全稱(chēng):HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
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