- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381913 > HSD471A (HSMC CORP.) NPN EPITAXIAL PLANAR TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | HSD471A |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 39K |
| 代理商： | HSD471A |
HI-SINCERITY
MICROELECTRONICS CORP.
HSD471A
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6518
Issued Date : 1993.02.24
Revised Date : 2002.02.20
Page No. : 1/4
HSD471A
HSMC Product Specification
Description
The HSD471A is designed for use in drive and output stage of
frequency amplifier applications.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature...................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 800 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 40 V
VCEO Collector to Emitter Voltage...................................................................................... 30 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current............................................................................................................... 1 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*VBE(sat)
*hFE
fT
Cob
Min.
40
30
5
-
-
-
70
-
-
Typ.
-
-
-
-
-
-
-
130
16
Max.
-
-
-
100
0.5
1.2
400
-
-
Unit
V
V
V
nA
V
V
Test Conditions
IC=100uA, IE=0
IC=10mA, IB=0
IE=100uA, IC=0
VCB=30V, IE=0
IC=1A, IB=100mA
IC=1A, IB=100mA
VCE=1V, IC=100mA
VCE=6V, IC=10mA
VCB=6V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification of hFE
Rank
Range
O
Y
GR
70-140
120-240
200-400
TO-92
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HSD667A | SILICON NPN EPITAXIAL |
| HSD669A | NPN EPITAXIAL PLANAR TRANSISTOR |
| HSD879D | ; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):Yes |
| HSD879 | TAP SWITCHES |
| HSD880 | NPN EPITAXIAL PLANAR TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSD4M64B4 | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:Synchronous DRAM Module 32Mbyte (4Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V |
| HSD4M64B4-10 | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:Synchronous DRAM Module 32Mbyte (4Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V |
| HSD4M64B4-10L | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:Synchronous DRAM Module 32Mbyte (4Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V |
| HSD4M64B4-13N | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:Synchronous DRAM Module 32Mbyte (4Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V |
| HSD4M64B4-8 | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:Synchronous DRAM Module 32Mbyte (4Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。