參數(shù)資料
型號(hào)： HSC-INTERFACEBOARD
廠商： Analog Devices, Inc.
英文描述： 1.75 MSPS, 4 mW 10-Bit/12-Bit Parallel ADCs
中文描述： 1.75 MSPS的，4 10-Bit/12-Bit并行模數(shù)轉(zhuǎn)換器毫瓦
文件頁數(shù)： 3/16頁
文件大小： 197K
代理商： HSC-INTERFACEBOARD
REV. A
–3–
AD7470/AD7472
AD7472–SPECIFICATIONS
1
(V
DD
= +2.7 V to +5.25 V
2
, REF IN = 2.5 V, f
CLK IN
= 26 MHz @ 5 V and 20 MHz @ 3 V;
T
A
= T
MIN
to T
MAX3
, unless otherwise noted.)
Parameter
A Version
1
B Version
1
Units
Test Conditions/Comments
DYNAMIC PERFORMANCE
Signal to Noise + Distortion (SINAD) 69
5 V
3 V
69
68
70
68
–78
–84
–75
5 V
69
68
70
68
–83
–83
–75
3 V
69
68
70
68
–78
–84
–75
f
S
= 1.5 MSPS @ 5 V, f
S
= 1.2 MSPS @ 3 V
f
IN
= 500 kHz Sine Wave
f
IN
= 100 kHz Sine Wave
f
IN
= 500 kHz Sine Wave
f
IN
= 100 kHz Sine Wave
f
IN
= 500 kHz Sine Wave
f
IN
= 100 kHz Sine Wave
f
IN
= 100 kHz Sine Wave
dB typ
dB min
dB typ
dB min
dB typ
dB typ
dB max
68
70
68
–83
–83
–75
Signal-to-Noise Ratio (SNR)
Total Harmonic Distortion (THD)
Peak Harmonic or Spurious Noise
(SFDR)
–86
–86
–76
–81
–86
–76
–86
–86
–76
–81
–86
–76
dB typ
dB typ
dB max
f
IN
= 500 kHz Sine Wave
f
IN
= 100 kHz Sine Wave
f
IN
= 100 kHz Sine Wave
Intermodulation Distortion (IMD)
Second Order Terms
–77
–86
–77
–86
5
15
20
–77
–86
–77
–86
5
15
20
–77
–86
–77
–86
5
15
20
–77
–86
–77
–86
5
15
20
dB typ
dB typ
dB typ
dB typ
ns typ
ps typ
MHz typ
f
IN
= 500 kHz Sine Wave
f
IN
= 100 kHz Sine Wave
f
IN
= 500 kHz Sine Wave
f
IN
= 100 kHz Sine Wave
Third Order Terms
Aperture Delay
Aperture Jitter
Full Power Bandwidth
DC ACCURACY
Resolution
Integral Nonlinearity
f
S
= 1.5 MSPS @ 5 V; f
S
= 1.2 MSPS @ 3 V
12
±
2
12
±
2
12
±
1
12
±
1
Bits
LSB max
Guaranteed No Missed Codes to 11 Bits
(A Version)
Guaranteed No Missed Codes to 12 Bits
(B Version)
Differential Nonlinearity
±
1.8
±
1.8
±
0.9
±
0.9
LSB max
Offset Error
Gain Error
ANALOG INPUT
Input Voltage Ranges
DC Leakage Current
Input Capacitance
REFERENCE INPUT
REF IN Input Voltage Range
DC Leakage Current
Input Capacitance
LOGIC INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current, I
Input Capacitance, C
IN4
LOGIC OUTPUTS
Output High Voltage, V
OH
Output Low Voltage, V
Floating-State Leakage Current
Floating-State Output Capacitance
Output Coding
CONVERSION RATE
Conversion Time
±
10
±
2
±
10
±
2
±
10
±
2
±
10
±
2
LSB max
LSB max
0 to REF IN 0 to REF IN
±
1
33
0 to REF IN 0 to REF IN
±
1
33
V
μ
A max
pF typ
±
1
33
±
1
33
2.5
±
1
10/20
2.5
±
1
10/20
2.5
±
1
10/20
2.5
±
1
10/20
V
μ
A max
pF typ
±
1% for Specified Performance
Track/Hold Mode
2.4
0.4
±
1
10
2.4
0.4
±
1
10
2.4
0.4
±
1
10
2.4
0.4
±
1
10
V min
V max
μ
A max
pF max
Typically 10 nA, V
IN
= 0 V or V
DD
V
DRIVE
– 0.2
0.4
±
10
10
Straight (Natural) Binary
V
DRIVE
– 0.2
0.4
±
10
10
V
DRIVE
– 0.2
0.4
±
10
10
Straight (Natural) Binary
V
DRIVE
– 0.2
0.4
±
10
10
V min
V max
μ
A max
pF max
I
SOURCE
= 200
μ
A
I
SINK
μ
A
V
DD
= 2.7 V to 5.25 V
14
14
14
14
CLK IN
Cycles (max)
ns min
MSPS max
Track/Hold Acquisition Time
Throughput Rate
135
1.5
135
1.2
135
1.5
135
1.2
Conversion Time + Acquisition Time
CLK IN Is 26 MHz @ 5 V and 20 MHz @ 3 V
POWER REQUIREMENTS
V
I
DD
Normal Mode
Quiescent Current
Normal Mode
Quiescent Current
Sleep Mode
Power Dissipation
5
Normal Mode
+2.7/+5.25
+2.7/+5.25
V min/max
Digital I/Ps = 0 V or DV
DD
V
DD
= 4.75 V to 5.25 V; f
S
= 1.5 MSPS; Typ 2 mA
V
DD
= 4.75 V to 5.25 V; f
= 1.5 MSPS
V
DD
= 2.7 V to 3.3 V; f
S
= 1.2 MSPS; Typ 1.3 mA
V
= 2.7 V to 3.3 V; f
S
= 1.2 MSPS
CLK IN = 0 V or DV
Digital I/Ps = 0 V or DV
DD
V
DD
= 5 V
V
DD
= 3 V
V
DD
= 5 V; CLK IN = 0 V or DV
DD
V
DD
= 3 V; CLK IN = 0 V or DV
DD
2.4
900
1.5
800
1
2.4
900
1.5
800
1
mA max
μ
A max
mA max
μ
A
μ
A max
12
4.5
5
3
12
4.5
5
3
mW max
mW max
μ
W max
μ
W max
Sleep Mode
NOTES
1
Temperature ranges as follows: A and B Versions: –40
°
C to +85
°
C.
2
The AD7472 functionally works at 2.35 V. Typical specifications @ +25
°
C for SNR (100 kHz) = 68 dB; THD (100 kHz) = –84 dB; INL
±
0.8 LSB.
3
The AD7472 will typically maintain A-grade performance up to +125
°
C, with a reduced CLK of 18 MHz @ 5 V and 14 MHz @ 3 V. Typical Sleep Mode current @ +125
°
C is 700 nA.
4
Sample tested @ +25
°
C to ensure compliance.
5
See Power vs. Throughput Rate section.
Specifications subject to change without notice.
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