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參數(shù)資料
| 型號(hào)： | HSB649T |
| 廠商： | HSMC CORP. |
| 英文描述： | SILICON PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進(jìn)步黨外延硅平面晶體管 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | HSB649T |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200103
Issued Date : 2001.12.01
Revised Date : 2005.12.02
Page No. : 4/4
HSB649T
HSMC Product Specification
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Profile Feature
Sn-Pb Eutectic Assembly
<3
o
C/sec
Pb-Free Assembly
<3
o
C/sec
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
100
o
C
150
o
C
60~120 sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
217
o
C
60~150 sec
260
o
C +0/-5
o
C
10~30 sec
20~40 sec
<6
o
C/sec
<6 minutes
<6
o
C/sec
<8 minutes
3. Flow (wave) soldering (solder dipping)
Products
Peak temperature
245
o
C
±
5
o
C
260
o
C +0/-5
o
C
Dipping time
5sec
±
1sec
5sec
±
1sec
Pb devices.
Pb-Free devices.
Figure 1: Temperature profile
t
P
t
L
Ramp-down
Ramp-up
Ts
max
Ts
min
Critical Zone
T
L
to T
P
t
S
Preheat
T
L
T
P
25
t 25
o
C to Peak
Time
T
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