參數(shù)資料
型號: HSC2240
廠商: HSMC CORP.
英文描述: NPN EPITAXIAL PLANAR TRANSISTOR
中文描述: 瑞展晶體管
文件頁數(shù): 1/4頁
文件大?。?/td> 36K
代理商: HSC2240
HI-SINCERITY
MICROELECTRONICS CORP.
HSC2240
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6529
Issued Date : 1992.12.16
Revised Date : 2002.10.09
Page No. : 1/4
HSC2240
HSMC Product Specification
Description
Low noise audio amplifier applications
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature...................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage....................................................................................... 150 V
VCEO Collector to Emitter Voltage.................................................................................... 150 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current ....................................................................................................... 100 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
VBE(on)
*hFE
fT
Cob
Min.
150
150
5
-
-
-
500
120
-
-
Typ.
-
-
-
-
-
-
-
-
100
3
Max.
-
-
-
100
100
300
800
400
-
-
Unit
V
V
V
nA
nA
mV
mV
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=120V, IE=0
VEB=5V, IC=0
IB=1mA, IC=10mA
IC=2mA, VCE=6V
VCE=6V, IC=2mA
VCE=6V, IC=1mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
MHz
pF
Classification of hFE
Rank
Range
Y
GR
120-240
200-400
TO-92
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