參數(shù)資料
型號(hào)： HSB649T
廠商： HSMC CORP.
英文描述： SILICON PNP EPITAXIAL PLANAR TRANSISTOR
中文描述： 進(jìn)步黨外延硅平面晶體管
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 54K
代理商： HSB649T
HI-SINCERITY
MICROELECTRONICS CORP.
HSB649T
SILICON PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HT200103
Issued Date : 2001.12.01
Revised Date : 2005.12.02
Page No. : 1/4
HSB649T
HSMC Product Specification
Description
Low frequency power amplifier.
Absolute Maximum Ratings
(T
A
=25
°
C)
Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150
°
C
Junction Temperature................................................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation ....................................................................................................................................... 1 W
Total Power Dissipation (T
C
=25
°
C).................................................................................................................... 20 W
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage...................................................................................................................... -180 V
BV
CEO
Collector to Emitter Voltage................................................................................................................... -160 V
BV
Emitter to Base Voltage............................................................................................................................. -5 V
I
C
Collector Current (DC) .................................................................................................................................. -1.5 A
I
C
Collector Current (Pulse).................................................................................................................................. -3 A
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction to Case (Max.).....................................................................................6.25
°
C/W
Electrical Characteristics
(T
A
=25
°
C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
*V
CE(sat)
*V
BE(on)
*h
FE1
*h
FE2
f
T
Cob
Min.
-180
-160
-5
-
-
-
100
30
-
-
Typ.
-
-
-
-
-
-
-
-
140
27
Max.
-
-
-
-10
-1
-1.5
200
-
-
-
Unit
V
V
V
uA
V
V
Test Conditions
I
C
=-1mA, I
E
=0
I
C
=-10mA, I
B
=0
I
E
=-1mA, I
C
=0
V
CB
=-160V, I
E
=0
I
C
=-500mA, I
B
=-50mA
I
C
=-150mA, V
CE
=-5V
I
C
=-150mA, V
CE
=-5V
I
C
=-500mA, V
CE
=-5V
I
C
=-150mA ,V
CE
=-5V
V
CB
=-10V, f=1MHz, I
E
=0
MHz
pF
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
Classification Of hFE1
Rank
Range
C
100-200
TO-126
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