參數(shù)資料
型號(hào)： HS-6617RH
廠商： Intersil Corporation
英文描述： Radiation Hardened 2K x 8 CMOS PROM
中文描述： 輻射加固2K × 8的CMOS胎膜早破
文件頁(yè)數(shù)： 4/14頁(yè)
文件大?。?/td> 128K
代理商： HS-6617RH
4
Specifications HS-6617RH
Address Hold Time
TELAX
VDD = 4.5V and 5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
25
-
ns
Chip Enable Low Width
TELEH
VDD = 4.5V and 5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
120
-
ns
Chip Enable High Width
TEHEL
VDD = 4.5V and 5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
40
-
ns
Read Cycle Time
TELEL
VDD = 4.5V and 5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
160
-
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume transition time
≤
5ns; input levels = 0.0V to 3.0V; timing reference levels = 1.5V; output load = 1 TTLequivalent
load and CL
≥
50pF.
3. All tests performed with P hardwired to VDD.
4. TAVQV = TELQV + TAVEL.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS, AC AND DC
PARAMETERS
SYMBOL
(NOTE 2)
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input Capacitance
CIN
VDD = Open, f = 1MHz
1, 3
T
A
= +25
o
C
-
10
pF
I/O Capacitance
CI/O
VDD = Open, f = 1MHz
1, 3
T
A
= +25
o
C
-
12
pF
Chip Enable Time
TELQX
VDD = 4.5V and 5.5V
3
-55
o
C
≤
T
A
≤
+125
o
C
5
-
ns
Output Enable Time
TGLQX
VDD = 4.5V and 5.5V
3
-55
o
C
≤
T
A
≤
+125
o
C
5
-
ns
Chip Disable Time
TEHQZ
VDD = 4.5V and 5.5V
3
-55
o
C
≤
T
A
≤
+125
o
C
-
50
ns
Output Disable Time
TGHQZ
VDD = 4.5V and 5.5V
3
-55
o
C
≤
T
A
≤
+125
o
C
-
50
ns
Output High Voltage
VOH2
VDD = 4.5V, IO = 100
μ
A
3
-55
o
C
≤
T
A
≤
+125
o
C
VDD-
0.5V
-
V
NOTES:
1. All measurements referenced to device GND.
2. All tests performed with P hardwired to VDD.
3. The parameters listed are controlled via design or process parameters and are not directly tested. These parameters are characterized
upon initial design and after design or process changes which would affect these characteristics.
TABLE 4. POST 100K RAD AC AND DC ELECTRICAL PERFORMANCE CHARACTERISTICS
NOTE:
All AC and DC parameters are tested at the +25
o
C pre-irradiation limits.
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Guaranteed and 100% Tested.
PARAMETERS
SYMBOL
(NOTES 1, 2, 3)
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Spec Number
518742
相關(guān)PDF資料
PDF描述
HS-6664RH Radiation Hardened 8K x 8 CMOS PROM
HS-801 ECL
HS-807 ECL
HS-809 ECL
HS-80A ECL
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