參數(shù)資料
型號: HM5113805FTD-6
廠商: Hitachi,Ltd.
英文描述: 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
中文描述: 128M的內(nèi)存江戶(16 Mword × 8位)8K的refresh/4k刷新
文件頁數(shù): 12/34頁
文件大?。?/td> 480K
代理商: HM5113805FTD-6
HM5112805F-6, HM5113805F-6
12
Read Cycle
HM5112805F/HM5113805F
-6
Parameter
Access time from
RAS
Access time from
CAS
Symbol
Min
Max
Unit
Notes
t
RAC
t
CAC
t
AA
t
OEA
t
RCS
t
RCH
t
RCHR
t
RRH
t
RAL
t
CAL
t
CLZ
t
OH
t
OHO
t
OFF
t
OEZ
t
CDD
t
OHR
t
OFR
t
WEZ
t
WED
t
RDD
60
ns
8, 9
15
ns
9, 10, 17
Access time from address
Access time from
OE
30
ns
9, 11, 17
15
ns
9
Read command setup time
Read command hold time to
CAS
Read command hold time from
RAS
Read command hold time to
RAS
Column address to
RAS
lead time
Column address to
CAS
lead time
CAS
to output in low-Z
0
ns
0
ns
12
60
ns
0
ns
12
30
ns
18
ns
0
ns
Output data hold time
Output data hold time from
OE
3
ns
21
3
ns
Output buffer turn-off time
Output buffer turn-off to
OE
CAS
to Din delay time
Output data hold time from
RAS
Output buffer turn-off to
RAS
Output buffer turn-off to
WE
WE
to Din delay time
RAS
to Din delay time
15
ns
13, 21
15
ns
13
15
ns
5
3
ns
21
15
ns
13, 21
15
ns
13
15
ns
15
ns
相關PDF資料
PDF描述
HM5112805F 128M EDO DRAM(128M 擴展數(shù)據(jù)輸出模式動態(tài)RAM)
HM5113805F 128 M EDO(Extended Data Output) DRAM(128M 擴展數(shù)據(jù)輸出模式動態(tài)RAM)
HM5113165F 128M EDO DRAM(128M 擴展數(shù)據(jù)輸出模式動態(tài)RAM)
HM5116100 16M FP DRAM (16-Mword x 1-bit) 4k Refresh
HM5116100S 16M FP DRAM (16-Mword x 1-bit) 4k Refresh
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