參數資料
型號: HM5113805FTD-6
廠商: Hitachi,Ltd.
英文描述: 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
中文描述: 128M的內存江戶(16 Mword × 8位)8K的refresh/4k刷新
文件頁數: 11/34頁
文件大?。?/td> 480K
代理商: HM5113805FTD-6
HM5112805F-6, HM5113805F-6
11
AC Characteristics
(Ta = 0 to +70C, V
CC
= 3.3 V
±
0.3 V, V
SS
= 0 V) *
1,
*
2,
*
19
Test Conditions
Input rise and fall time: 2 ns
Input pulse levels: V
IL
= 0 V, V
IH
= 3.0 V
Input timing reference levels: 0.8 V, 2.0 V
Output timing reference levels: 0.8 V, 2.0 V
Output load: 1 TTL gate + C
L
(100 pF) (Including scope and jig)
Read, Write, Read-Modify-Write and Refresh Cycles
(Common parameters)
HM5112805F/HM5113805F
-6
Parameter
Symbol
Min
Max
Unit
Notes
Random read or write cycle time
RAS
precharge time
CAS
precharge time
RAS
pulse width
CAS
pulse width
t
RC
t
RP
t
CP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
OED
t
DZO
t
DZC
t
T
104
ns
40
ns
10
ns
60
10000
ns
10
10000
ns
Row address setup time
0
ns
Row address hold time
10
ns
Column address setup time
0
ns
Column address hold time
RAS
to
CAS
delay time
RAS
to column address delay time
RAS
hold time
CAS
hold time
CAS
to
RAS
precharge time
OE
to Din delay time
OE
delay time from Din
CAS
delay time from Din
10
ns
14
45
ns
3
12
30
ns
4
15
ns
40
ns
5
ns
15
ns
5
0
ns
6
0
ns
6
Transition time (rise and fall)
2
50
ns
7
相關PDF資料
PDF描述
HM5112805F 128M EDO DRAM(128M 擴展數據輸出模式動態(tài)RAM)
HM5113805F 128 M EDO(Extended Data Output) DRAM(128M 擴展數據輸出模式動態(tài)RAM)
HM5113165F 128M EDO DRAM(128M 擴展數據輸出模式動態(tài)RAM)
HM5116100 16M FP DRAM (16-Mword x 1-bit) 4k Refresh
HM5116100S 16M FP DRAM (16-Mword x 1-bit) 4k Refresh
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