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參數(shù)資料
| 型號(hào)： | HGTG30N120D2 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30A, 1200V N-Channel IGBT |
| 中文描述： | 50 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大小： | 40K |
| 代理商： | HGTG30N120D2 |
3-113
HGTG30N120D2
FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT (REFER TO APPLICATION
NOTES AN7254 AND AN7260)
FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOR-
EMITTER CURRENT
Typical Performance Curves
(Continued)
50
40
30
20
0
I
C
,
+25
+50
+75
+100
+125
+150
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
V
GE
= 10V
10
2.0
1.5
1.0
0.5
0.0
t
F
,
μ
s
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
V
GE
=10V AND 15V, T
J
= +150
o
C,
R
G
= 25
, L = 50
μ
H
V
CE
= 480V
V
CE
= 960V
10000
8000
6000
4000
2000
0
C
0
5
10
15
20
25
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
f = 1MHz
C
ISS
C
OSS
C
RSS
1000
750
500
250
0
V
C
,
V
G
,
10
5
0
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
TIME (
μ
s)
GATE-
EMITTER
VOLTAGE
R
L
= 29
I
G(REF)
= 1.8mA
V
GE
= 10V
COLLECTOR-EMITTER VOLTAGE
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
V
CC
= BV
CES
V
CC
= BV
CES
5
4
3
2
1
0
V
C
,
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
6
7
8
T
J
= +150
o
C
V
GE
= 10V
V
GE
= 15V
100
10
1.0
0.1
W
O
,
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, R
G
= 25
,
L = 50
μ
H
V
CE
= 480V, V
GE
= 10V, 15V
V
CE
= 960V, V
GE
= 10V, 15V
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| HGTG30N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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| HGTG30N60A4D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
| HGTG30N60A4D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT TO-247 |
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