參數(shù)資料
型號： HGTG30N120D2
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 30A, 1200V N-Channel IGBT
中文描述： 50 A, 1200 V, N-CHANNEL IGBT, TO-247
文件頁數(shù)： 2/5頁
文件大?。?/td> 40K
代理商： HGTG30N120D2
3-112
Specifications HGTG30N120D2
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
TYP
MAX
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
1200
-
-
V
Zero Gate Voltage Collector Current
I
CES
V
CE
= BV
CES
T
C
= +25
o
C
T
C
= +125
o
C
T
C
= +25
o
C
T
C
= +125
o
C
T
C
= +25
o
C
T
C
= +125
o
C
T
C
= +25
o
C
-
-
1.0
mA
V
CE
= 0.8 BV
CES
-
-
4.0
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C90
,
V
GE
= 15V
-
3.0
3.5
V
-
3.2
3.5
V
I
C
= I
C90
,
V
GE
= 10V
-
3.2
3.8
V
-
3.4
3.8
V
Gate-Emitter Threshold Voltage
V
GE(TH)
V
GE
= V
CE
,
I
C
= 1mA
3.0
4.5
6.0
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
20V
-
-
±
500
nA
Gate-Emitter Plateau Voltage
V
GEP
I
C
= I
C90
, V
CE
= 0.5 BV
CES
-
7.3
-
V
On-State Gate Charge
Q
G(ON)
I
C
= I
C90
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
185
240
nC
V
GE
= 20V
-
240
315
nC
Current Turn-On Delay Time
t
D(ON)I
L = 50
μ
H, I
C
= I
C90
, R
G
= 25
,
V
GE
= 15V, T
J
= +125
o
C,
V
CE
= 0.8 BV
CES
-
100
-
ns
Current Rise Time
t
RI
-
150
-
ns
Current Turn-Off Delay Time
t
D(OFF)I
-
760
990
ns
Current Fall Time
t
FI
-
580
750
ns
Turn-Off Energy (Note 1)
W
OFF
-
8.4
-
mJ
Current Turn-On Delay Time
t
D(ON)I
L = 50
μ
H, I
C
= I
C90
, R
G
= 25
,
V
GE
= 10V, T
J
= +125
o
C,
V
CE
= 0.8 BV
CES
-
100
-
ns
Current Rise Time
t
RI
-
150
-
ns
Current Turn-Off Delay Time
t
D(OFF)I
-
610
790
ns
Current Fall Time
t
FI
-
580
750
ns
Turn-Off Energy (Note 1)
W
OFF
-
8.4
-
mJ
Thermal Resistance Junction-to-Case
R
θ
JC
-
0.5
0.6
o
C/W
NOTE: 1. Turn-Off Energy Loss (W
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A) The HGTG20N100D2 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
40
30
20
10
0
I
C
,
0
2
4
6
8
10
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
T
C
= +150
o
C
T
C
= +25
o
C
T
C
= -40
o
C
50
60
70
80
90
100
80
70
60
50
40
30
20
10
0
I
C
,
0
2
4
6
8
10
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, T
C
= +25
o
C
V
GE
= 15V
V
GE
= 8V
V
GE
= 7.5V
V
GE
= 7.0V
V
GE
= 6.5V
V
GE
= 6.0V
V
GE
= 10V
90
100
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