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參數(shù)資料
| 型號： | HGTG34N100E2 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | LED 5MM VERT SUP DIFF YEL PC MNT |
| 中文描述： | 55 A, 1000 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 38K |
| 代理商： | HGTG34N100E2 |
3-124
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HGTG34N100E2
34A, 1000V N-Channel IGBT
Features
34A, 1000V
Latch Free Operation
Typical Fall Time - 710ns
High Input Impedance
Low Conduction Loss
Description
The HGTG34N100E2 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOS-
FET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately
between +25
o
C and +150
o
C.
The IGBTs are ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power sup-
plies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY
Formerly Developmental Type TA9895.
PART NUMBER
PACKAGE
BRAND
HGTG34N100E2
TO-247
G34N100E2
NOTE: When ordering, use the entire part number.
April 1995
Package
JEDEC STYLE TO-247
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
(BOTTOM SIDE
METAL)
GATE
COLLECTOR
EMITTER
C
E
G
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTG34N100E2
1000
1000
55
34
200
±
20
±
30
200A at 0.8 BV
CES
208
1.67
-55 to +150
260
3
10
UNITS
V
V
A
A
A
V
V
-
W
W/
o
C
o
C
o
C
μ
s
μ
s
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector-Gate Voltage, R
GE
=1M
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CGR
Collector Current Continuous at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
at V
GE
= 15V, at T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . I
C90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= +150
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PEAK)
= 600V, T
C
= +125
o
C, R
GE
= 25
.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
File Number
2827.3
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