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參數(shù)資料
| 型號： | HGTG32N60E2 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 50 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 33K |
| 代理商： | HGTG32N60E2 |
3-120
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HGTG32N60E2
32A, 600V N-Channel IGBT
Features
32A, 600V
Latch Free Operation
Typical Fall Time - 600ns
High Input Impedance
Low Conduction Loss
Description
The IGBT is a MOS gated high voltage switching device combin-
ing the best features of MOSFETs and bipolar transistors. The
device has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between +25
o
C
and +150
o
C.
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are essen-
tial, such as: AC and DC motor controls, power supplies and
drivers for solenoids, relays and contactors.
This device incorporates generation two design techniques
which yield improved peak current capability and larger short cir-
cuit withstand capability than previous designs.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTG32N60E2
TO-247
G32N60E2
NOTE: When ordering, use the entire part number.
April 1995
Package
JEDEC STYLE TO-247
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
(BOTTOM SIDE
METAL)
GATE
COLLECTOR
EMITTER
C
E
G
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTG32N60E2
600
600
50
32
200
±
20
±
30
200A at 0.8 BV
CES
208
1.67
-55 to +150
260
3
15
UNITS
V
V
A
A
A
V
V
-
W
W/
o
C
o
C
o
C
μ
s
μ
s
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector-Gate Voltage R
GE
= 1M
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CGR
Collector Current Continuous at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
at V
GE
= 15V, at T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= +150
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Short Circuit Withstand Time (Note 2)at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PEAK)
= 360V, T
C
= +125
o
C, R
GE
= 25
.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,587,713
4,598,461
4,605,948
4,618,872
4,641,162
4,644,637
4,682,195
4,684,413
4,794,432
4,801,986
4,803,533
4,809,045
4,860,080
4,883,767
4,888,627
4,890,143
4,969,027
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
File Number
2828.3
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