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參數(shù)資料
| 型號： | HGTG30N120D2 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30A, 1200V N-Channel IGBT |
| 中文描述： | 50 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 40K |
| 代理商： | HGTG30N120D2 |
3-111
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HGTG30N120D2
30A, 1200V N-Channel IGBT
Features
30A, 1200V
Latch Free Operation
Typical Fall Time - 580ns
High Input Impedance
Low Conduction Loss
Description
The HGTG30N120D2 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOS-
FET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately
between +25
o
C and +150
o
C.
The IGBTs are ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power sup-
plies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49010
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTG30N120D2
TO-247
G30N120D2
April 1995
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTG30N120D2
1200
1200
50
30
200
±
20
±
30
200A at 0.8 BV
CES
208
1.67
-55 to +150
260
6
15
UNITS
V
V
A
A
A
V
V
-
W
W/
o
C
o
C
o
C
μ
S
μ
S
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector-Gate Voltage, R
GE
=1M
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CGR
Collector Current Continuous at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
at V
GE
=15V at T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . I
C90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= +150
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Total Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Short Circuit Withstand Time (Note 2) at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
at V
GE
= 10V . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PEAK)
= 720V, T
C
= +125
o
C, R
GE
= 25
.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
Package
JEDEC STYLE TO-247
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
(BOTTOM SIDE
METAL)
GATE
COLLECTOR
EMITTER
C
E
G
File Number
2834.2
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