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參數(shù)資料
| 型號： | HGTG30N60B3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 60A, 600V, UFS Series N-Channel IGBT(60A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 60 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 114K |
| 代理商： | HGTG30N60B3 |
1
TM
File Number
4444.3
HGTG30N60B3
60A, 600V, UFS Series N-Channel IGBT
The HGTG30N60B3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25
o
C and 150
o
C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49170.
Symbol
Features
60A, 600V, T
C
= 25
o
C
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG30N60B3
TO-247
G30N60B3
NOTE: When ordering, use the entire part number.
C
E
G
G
C
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
November 2000
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
Intersil and Design is a trademark of Intersil Corporation.
Copyright Intersil Corporation 2000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG30N60B3_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG30N60B3D | 功能描述:IGBT 晶體管 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG30N60B3D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBTN CH600V30ATO-247 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,N CH,600V,30A,TO-247 |
| HGTG30N60B3D | 制造商:Fairchild Semiconductor Corporation 功能描述:SEMICONDUCTOR |
| HGTG30N60B3D_04 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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