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參數(shù)資料
| 型號(hào)： | HGTG24N60D1D |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3.3V 36-mc CPLD |
| 中文描述： | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 35K |
| 代理商： | HGTG24N60D1D |
3-111
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HGTG24N60D1D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTG24N60D1 | 36 MACROCELL 3.3 VOLT ISP CPLD |
| HGTG30N120D2 | 30A, 1200V N-Channel IGBT |
| HGTG30N60B3D | 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(60A, 600V, UFS系列 帶超快二極管N溝道絕緣柵雙極型晶體管) |
| HGTG30N60B3 | 60A, 600V, UFS Series N-Channel IGBT(60A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| HGTG30N60C3D | 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG24N60DID | 制造商:Harris Corporation 功能描述: |
| HGTG27N120BN | 功能描述:IGBT 晶體管 72A 1200V NPT Series N-Ch IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG27N120BN | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT IC |
| HGTG27N120BN_04 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:72A, 1200V, NPT Series N-Channel IGBT |
| HGTG27N60C3DR | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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