參數(shù)資料
型號(hào): HGTG24N60D1D
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 3.3V 36-mc CPLD
中文描述: 40 A, 600 V, N-CHANNEL IGBT, TO-247
文件頁數(shù): 1/5頁
文件大?。?/td> 35K
代理商: HGTG24N60D1D
3-107
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
Features
24A, 600V
Latch Free Operation
Typical Fall Time <500ns
Low Conduction Loss
With Anti-Parallel Diode
t
RR
< 60ns
Description
The IGBT is a MOS gated high voltage switching device
combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25
o
C and +150
o
C. The diode used in
parallel with the IGBT is an ultrafast (t
RR
< 60ns) with soft
recovery characteristic.
The IGBTs are ideal for many high voltage switching applica-
tions operating at frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
April 1995
HGTG24N60D1D
24A, 600V N-Channel IGBT
with Anti-Parallel Ultrafast Diode
Package
JEDEC STYLE TO-247
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTG24N60D1D
TO-247
G24N60D1D
NOTE: When ordering, use the entire part number.
COLLECTOR
(BOTTOM SIDE
METAL)
GATE
COLLECTOR
EMITTER
C
G
E
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specific
HGTG24N60D1D
600
600
40
24
96
±
25
60A at 0.8 BV
CES
40
24
125
1.0
-55 to +150
260
UNITS
V
V
A
A
A
V
-
A
A
W
W/
o
C
o
C
o
C
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector-Gate Voltage R
GE
= 1M
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CGR
Collector Current Continuous
at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
at T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Switching Safe Operating Area at T
J
= +150
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Diode Forward Current
at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
F25
at T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
F90
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
(0.125 inch from case for 5s)
NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
File Number
2797.4
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