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參數(shù)資料
| 型號： | HGTG24N60D1D |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3.3V 36-mc CPLD |
| 中文描述： | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 35K |
| 代理商： | HGTG24N60D1D |
3-109
HGTG24N60D1D
FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT (REFER TO APPLICATION
NOTES AN7254 AND AN7260)
FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOR-
EMITTER CURRENT
Typical Performance Curves
(Continued)
50
40
30
20
0
I
C
,
+25
+50
+75
+100
+125
+150
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
10
t
F
,
1
10
40
I
CE
, COLLECTOR-EMITTER CURRENT (A)
V
CE
= 480V, V
GE
= 10V AND 15V,
T
J
= +150
C, R
G
= 25
, L = 500
μ
H
1000
900
800
700
600
500
400
300
200
100
0
6000
5000
4000
3000
2000
1000
0
C
0
5
10
15
20
25
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
f = 1MHz
C
ISS
C
OSS
C
RSS
600
450
300
150
0
V
C
,
V
G
,
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
TIME (
μ
s)
V
CC
= BV
CES
R
L
= 30
I
G(REF)
= 1.83mA
GE
= 10V
V
CC
= BV
CES
10.0
7.5
5.0
2.5
0
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
3
2
1
0
V
C
,
1
10
40
V
CE
, COLLECTOR-EMITTER CURRENT (A)
V
GE
= 10V
T
J
= +150
o
C
V
GE
= 15V
7.00
1.00
0.10
0.05
W
O
,
1
10
40
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, R
G
= 25
,
L = 500
μ
H
V
CE
= 240V, V
GE
= 10V, 15V
V
CE
= 480V, V
GE
= 10V, 15V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG24N60DID | 制造商:Harris Corporation 功能描述: |
| HGTG27N120BN | 功能描述:IGBT 晶體管 72A 1200V NPT Series N-Ch IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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