參數(shù)資料
型號(hào)： HGTG24N60D1D
廠商： HARRIS SEMICONDUCTOR
元件分類(lèi)： 功率晶體管
英文描述： 3.3V 36-mc CPLD
中文描述： 40 A, 600 V, N-CHANNEL IGBT, TO-247
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 35K
代理商： HGTG24N60D1D
3-108
Specifications HGTG24N60D1D
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
TYP
MAX
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 280
μ
A, V
GE
= 0V
600
-
-
V
Collector-Emitter Leakage Voltage
I
CES
V
CE
= BV
CES
T
C
= +25
o
C
-
-
280
μ
A
V
CE
= 0.8 BV
CES
T
C
= +125
o
C
-
-
5.0
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C90
,
V
GE
= 15V
T
C
= +25
o
C
-
1.7
2.3
V
T
C
= +125
o
C
-
1.9
2.5
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
μ
A,
V
CE
= V
GE
T
C
= +25
o
C
3.0
4.5
6.0
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
20V
-
-
±
500
nA
Gate-Emitter Plateau Voltage
V
GEP
I
C
= I
C90
, V
CE
= 0.5 BV
CES
-
6.3
-
V
On-State Gate Charge
Q
G(ON)
I
C
= I
C90
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
120
155
nC
V
GE
= 20V
-
155
200
nC
Current Turn-On Delay Time
t
D(ON)I
L = 500
μ
H, I
C
= I
C90
, R
G
= 25
,
V
GE
= 15V, T
J
= +150
o
C,
V
CE
= 0.8 BV
CES
-
100
-
ns
Current Rise Time
t
RI
-
150
-
ns
Current Turn-Off Delay Time
t
D(OFF)I
-
700
900
ns
Current Fall Time
t
FI
-
450
600
ns
Turn-Off Energy (Note 1)
W
OFF
-
4.3
-
mJ
Thermal Resistance (IGBT)
R
θ
JC
-
-
1.00
o
C/W
Thermal Resistance Diode
R
θ
JC
-
-
1.50
o
C/W
Diode Forward Voltage
V
EC
I
EC
= 24A
-
-
1.50
V
Diode Reverse Recovery Time
t
RR
I
EC
= 24A, di/dt = 100A/
μ
s
-
-
60
ns
NOTE: 1. Turn-Off Energy Loss (W
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A) The HGTG24N60D1D was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
40
30
20
10
0
I
C
,
0
2
4
6
8
10
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 15V
T
C
= +150
o
C
T
C
= +25
o
C
T
C
= -40
o
C
40
35
30
25
20
15
10
5
0
I
C
,
0
1
2
3
4
5
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, T
C
= +25
o
C
V
GE
= 15V
V
GE
= 7.0V
V
GE
= 6.5V
V
GE
= 6.0V
V
GE
= 10V
V
GE
= 5.5V
V
GE
= 5.0V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTG24N60DID 制造商:Harris Corporation 功能描述:
HGTG27N120BN 功能描述:IGBT 晶體管 72A 1200V NPT Series N-Ch IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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HGTG27N120BN_04 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:72A, 1200V, NPT Series N-Channel IGBT
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