參數(shù)資料
型號(hào): HGTG20N120CND
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): 功率晶體管
英文描述: 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
中文描述: 63 A, 1200 V, N-CHANNEL IGBT, TO-247
文件頁(yè)數(shù): 6/8頁(yè)
文件大?。?/td> 121K
代理商: HGTG20N120CND
2001 Fairchild Semiconductor Corporation
HGTG20N120CND Rev. B
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
C
RES
0
5
10
15
20
25
0
1
C
IES
C
OES
2
4
5
6
FREQUENCY = 1MHz
3
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
25
0
1
0
2
4
5
30
DUTY CYCLE < 0.5%, T
C
= 110
o
C
PULSE DURATION = 250
μ
s
20
10
15
3
V
GE
= 15V OR 12V
V
GE
= 10V
t
1
t
2
P
D
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
t
1
, RECTANGULAR PULSE DURATION (s)
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
-4
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
Z
θ
J
,
0.01
V
F
, FORWARD VOLTAGE (V)
I
F
,100
1
0
1
2
3
4
5
150
o
C
25
o
C
I
F
, FORWARD CURRENT (A)
10
20
70
20
1
30
60
t
10
40
5
t
rr
t
a
50
t
b
2
T
C
= 25
o
C, dI
EC
/dt = 200A/
μ
s
HGTG20N120CND
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