參數(shù)資料
型號： HGTG20N120CND
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
中文描述： 63 A, 1200 V, N-CHANNEL IGBT, TO-247
文件頁數(shù)： 2/8頁
文件大?。?/td> 121K
代理商： HGTG20N120CND
2001 Fairchild Semiconductor Corporation
HGTG20N120CND Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG20N120CND
1200
UNITS
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector Current Continuous
At T
C
= 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
At T
C
= 110
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Switching Safe Operating Area at T
J
= 150
Power Dissipation Total at T
C
= 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Power Dissipation Derating T
C
> 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Short Circuit Withstand Time (Note 2) at V
GE
Short Circuit Withstand Time (Note 2) at V
GE
CES
o
C25
63
30
160
±
20
±
30
A
A
A
V
V
o
C110
CM
GES
GEM
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . SSOA
100A at 1200V
390
3.12
-55 to 150
260
8
15
o
D
W
o
W/
o
o
C
J
, T
STG
C
C
s
s
L
o
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . t
= 12V . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
μ
μ
SC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 960V, T
J
= 125
o
C, R
G
= 3
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
1200
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
15
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= 1200V
T
C
= 25
o
C
-
-
250
μ
A
T
C
= 125
o
C
-
450
-
μ
A
T
C
= 150
o
C
-
-
6
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
V
C
= 20A,
GE
= 15V
T
C
= 25
o
C
-
2.1
2.4
V
T
C
= 150
o
C
-
2.9
3.5
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 150
μ
A, V
CE
= V
GE
6.0
6.9
-
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
±
20V
-
-
±
250
nA
Switching SOA
SSOA
T
L = 200
J
= 150
o
C, R
H, V
G
= 3
,
= 1200V
V
GE
= 15V,
μ
CE(PK)
100
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 20A, V
CE
= 600V
-
10.2
-
V
On-State Gate Charge
Q
G(ON)
I
V
C
= 20A,
CE
= 600V
V
GE
= 15V
-
155
200
nC
V
GE
o
= 20V
-
200
250
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
I
CE
= 20A
V
CE
= 960V
V
GE
= 15V
R
G
= 3
L = 1mH
Test Circuit (Figure 20)
J
= 25
C
-
23
28
ns
Current Rise Time
t
rI
-
17
22
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
200
240
ns
Current Fall Time
t
fI
-
220
270
ns
Turn-On Energy
E
ON
-
2.0
2.5
mJ
Turn-Off Energy (Note 3)
E
OFF
-
2.8
3.3
mJ
HGTG20N120CND
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