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參數(shù)資料
| 型號(hào)： | HGTG20N120CND |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 63 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 121K |
| 代理商： | HGTG20N120CND |
2001 Fairchild Semiconductor Corporation
HGTG20N120CND Rev. B
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
5
10
15
20
25
30
35
15
40
25
30
35
40
R
G
= 3
, L = 1mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
10
0
20
80
60
30
5
40
25
20
15
40
35
100
120
R
G
= 3
, L = 1mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C OR T
J
= 150
o
C, V
GE
= 15V
10
20
5
250
15
150
200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
30
450
40
35
350
400
25
300
R
G
= 3
, L = 1mH, V
CE
= 960V
V
GE
= 12V, V
GE
= 15V, T
J
= 150
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
10
5
100
300
15
200
500
700
30
20
40
35
R
G
= 3
, L = 1mH, V
CE
= 960V
400
600
25
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
I
C
,
0
50
100
13
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
150
200
14
15
250
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -55
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 20V
6
V
G
,
Q
G
, GATE CHARGE (nC)
5
20
0
0
100
50
150
V
CE
= 400V
V
CE
= 800V
I
G(REF)
= 2mA, R
L
= 30
, T
C
= 25
o
C
V
CE
= 1200V
10
15
200
HGTG20N120CND
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| HGTG20N120E2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| HGTG20N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG20N60A4 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| HGTG20N60A4_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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