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參數(shù)資料
| 型號(hào)： | HGTG20N120CND |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 63 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 121K |
| 代理商： | HGTG20N120CND |
2001 Fairchild Semiconductor Corporation
HGTG20N120CND Rev. B
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
I
CE
= 20A
V
CE
= 960V
V
GE
= 15V
R
G
= 3
L = 1mH
Test Circuit (Figure 20)
J
= 150
o
C
-
21
26
ns
Current Rise Time
t
rI
-
17
22
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
225
270
ns
Current Fall Time
t
fI
-
340
400
ns
Turn-On Energy
E
ON
-
3.8
5.0
mJ
Turn-Off Energy (Note 3)
E
OFF
-
4.6
5.3
mJ
Diode Forward Voltage
V
EC
I
EC
= 20A
-
2.6
3.2
V
Diode Reverse Recovery Time
t
rr
I
EC
= 20A, dI
EC
/dt = 200A/
μ
s
-
62
75
ns
I
EC
= 2A, dI
EC
/dt = 200A/
μ
s
-
44
55
ns
Thermal Resistance Junction To Case
R
θ
JC
IGBT
-
-
0.32
o
C/W
Diode
-
-
0.75
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
0
20
V
GE
= 15V
25
75
100
125
150
40
30
10
50
60
70
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
80
0
I
C
,
20
40
600
800
400
200
1000
1200
0
100
120
60
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V, L = 200
μ
H
HGTG20N120CND
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| HGTG20N60B3D | 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(40A, 600V，N溝道絕緣柵雙極晶體管（帶反并行超快速二極管)) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG20N120E2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG20N50C1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG20N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG20N60A4 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| HGTG20N60A4_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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