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參數(shù)資料
| 型號： | HGTG20N120E2 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 34A, 1200V N-Channel IGBT |
| 中文描述： | 34 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 167K |
| 代理商： | HGTG20N120E2 |
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1995
3-98
Semiconductor
HGTG20N120E2
34A, 1200V N-Channel IGBT
Package
JEDEC STYLE TO-247
Terminal Diagram
COLLECTOR
(BOTTOM SIDE
METAL)
GATE
COLLECTOR
EMITTER
C
G
E
Features
34A, 1200V
Latch Free Operation
Typical Fall Time - 780ns
High Input Impedance
Low Conduction Loss
Description
The HGTG20N120E2 is a MOS gated, high voltage switch-
ing device combining the best features of MOSFETs and
bipolar transistors. The device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The much lower on-state voltage drop
varies only moderately between +25
o
C and +150
o
C.
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
The development type number for this device is TA49009.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTG20N120E2
TO-247
G20N120E2
April 1995
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTG20N120E2
1200
1200
UNITS
V
V
Collector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector-Gate Breakdown Voltage R
GE
= 1M
. . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CGR
Collector Current Continuous
At T
C
= +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= +90
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching SOA at T
C
= +150
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
(0.125" from case for 5 seconds)
Short Circuit Withstand Time (Note 2)
At V
GE
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
At V
GE
= 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PEAK)
= 720V, T
C
= +125
o
C, R
GE
= 25
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,587,713
4,598,461
4,605,948
4,618,872
4,641,162
4,644,637
4,682,195
4,684,413
4,794,432
4,801,986
4,803,533
4,809,045
4,860,080
4,883,767
4,888,627
4,890,143
4,969,027
34
20
100
±
20
±
30
A
A
A
V
V
-
W
100A at 0.8 BV
CES
150
1.20
-55 to +150
260
W/
o
C
o
C
o
C
3
15
μ
s
μ
s
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
File Number
3370.2
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