- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370430 > HB52RD648DC-B (Elpida Memory, Inc.) 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM PDF資料下載
參數(shù)資料
| 型號： | HB52RD648DC-B |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM |
| 中文描述： | 512 MB的無緩沖內(nèi)存的SODIMM 64 Mword】64位，133/100 MHz內(nèi)存總線，2銀模塊（16個(gè)32米】8部分）PC133/100 SDRAM內(nèi)存 |
| 文件頁數(shù)： | 7/20頁 |
| 文件大小： | 160K |
| 代理商： | HB52RD648DC-B |
HB52RF648DC-B, HB52RD648DC-B
Data Sheet E0083H40
7
Byte No. Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments
20
SDRAM device attributes:
W
latency
0
0
0
0
0
0
0
1
01
0
21
SDRAM module attributes
0
0
0
0
0
0
0
0
00
Non buffer
22
SDRAM device attributes:
General
0
0
0
0
1
1
1
0
0E
V
CC
± 10%
23
SDRAM cycle time
(2nd highest
CE
latency)
(-75/A6)10 ns
1
0
1
0
0
0
0
0
A0
CL = 2
(-B6) 15 ns
1
1
1
1
0
0
0
0
F0
24
SDRAM access from Clock
(2nd highest
CE
latency)
(-75/A6) 6 ns
0
1
1
0
0
0
0
0
60
(-B6) 9 ns
1
0
0
1
0
0
0
0
90
25
SDRAM cycle time
(3rd highest
CE
latency)
Undefined
0
0
0
0
0
0
0
0
00
26
SDRAM access from Clock
(3rd highest
CE
latency)
Undefined
0
0
0
0
0
0
0
0
00
27
Minimum row precharge time
0
0
0
1
0
1
0
0
14
20 ns
28
Row active to row active min
(-75)
0
0
0
0
1
1
1
1
0F
15 ns
(-A6/B6)
RE
to
CE
delay min
Minimum
RE
pulse width
(-75)
0
0
0
1
0
1
0
0
14
20 ns
29
0
0
0
1
0
1
0
0
14
20 ns
30
0
0
1
0
1
1
0
1
2D
45 ns
(-A6/B6)
0
0
1
1
0
0
1
0
32
50 ns
31
Density of each bank on
module
0
1
0
0
0
0
0
0
40
256M byte
32
Address and command signal
input setup time
(-75)
0
0
0
1
0
1
0
1
15
1.5 ns
(-A6/B6)
0
0
1
0
0
0
0
0
20
2.0 ns
33
Address and command signal
input hold time
(-75)
0
0
0
0
1
0
0
0
08
0.8 ns
(-A6/B6)
0
0
0
1
0
0
0
0
10
1.0 ns
34
Data signal input setup time
(-75)
0
0
0
1
0
1
0
1
15
1.5 ns
(-A6/B6)
0
0
1
0
0
0
0
0
20
2.0 ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52RF649DC | 512MB Unbuffered SDRAM S.O.DIMM |
| HB52RD649DC-A6B | 512MB Unbuffered SDRAM S.O.DIMM |
| HB52RD649DC-A6BL | 512MB Unbuffered SDRAM S.O.DIMM |
| HB52RD649DC-B | 512MB Unbuffered SDRAM S.O.DIMM |
| HB52RF649DC-75B | 512MB Unbuffered SDRAM S.O.DIMM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52RD648DC-B6B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52RD648DC-B6BL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52RD649DC-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered SDRAM S.O.DIMM |
| HB52RD649DC-A6BL | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered SDRAM S.O.DIMM |
| HB52RD649DC-B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered SDRAM S.O.DIMM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。