參數(shù)資料
型號: HB52RD648DC-B
廠商: Elpida Memory, Inc.
英文描述: 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM
中文描述: 512 MB的無緩沖內(nèi)存的SODIMM 64 Mword】64位,133/100 MHz內(nèi)存總線,2銀模塊(16個32米】8部分)PC133/100 SDRAM內(nèi)存
文件頁數(shù): 11/20頁
文件大小: 160K
代理商: HB52RD648DC-B
HB52RF648DC-B, HB52RD648DC-B
Data Sheet E0083H40
11
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Note
Voltage on any pin relative to V
SS
V
T
0.5 to V
+ 0.5
(
4.6 (max))
V
1
Supply voltage relative to V
SS
Short circuit output current
V
CC
Iout
0.5 to +4.6
V
1
50
mA
Power dissipation
P
T
Topr
8.0
W
Operating temperature
0 to +65
°
C
Storage temperature
Note:
1. Respect to V
SS
.
Tstg
55 to +125
°
C
DC Operating Conditions
(Ta = 0 to +65°C)
Parameter
Symbol
Min
Max
Unit
Notes
Supply voltage
V
CC
V
SS
V
IH
V
IL
3.0
3.6
V
1, 2
0
0
V
3
Input high voltage
2.0
V
CC
+ 0.3
0.8
V
1, 4
Input low voltage
0.3
V
1, 5
Ambient illuminance
Notes: 1. All voltage referred to V
SS
2. The supply voltage with all V
CC
pins must be on the same level.
3. The supply voltage with all V
SS
pins must be on the same level.
4. V
IH
(max) = V
CC
+
2.0 V for pulse width
3 ns at V
CC
.
5. V
IL
(min) = V
SS
2.0 V for pulse width
3 ns at V
SS
.
100
lx
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