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參數(shù)資料
| 型號： | HB52E649E12 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM) |
| 中文描述： | 注冊使用512 MB SDRAM的內(nèi)存（512 MB的寄存同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 6/18頁 |
| 文件大小： | 541K |
| 代理商： | HB52E649E12 |
HB52E649E12-A6B/B6B
6
Notes: 1.
All serial PD data are not protected. 0: Serial data, “driven Low”, 1: Serial data, “driven High”
These SPD are based on Intel specification (Rev.1.2A).
2. Regarding byte32 to 35, based on JEDEC Committee Ballot JC42.5-97-119.
3. Byte72 is manufacturing location code. (ex: In case of Japan, byte72 is 4AH. 4AH shows “J” on
ASCII code.)
4. Regarding byte93 and 94, based on JEDEC Committee Ballot JC42.5-97-135. BCD is “Binary
Coded Decimal”.
5. All bits of 99 through 125 are not defined (“1” or “0”).
6. Bytes 95 through 98 are assembly serial number.
7. These specifications are defined based on component specification, not module.
78
79
80
81
82
83
84
85
Manufacturer’s part number
Manufacturer’s part
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
(-A6B)
(-B6B)
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Revision code
Revision code
Manufacturing date
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
1
1
1
1
0
1
1
1
0
1
1
1
0
1
1
0
0
0
0
1
0
0
0
1
0
1
1
0
1
0
0
1
0
1
0
0
0
0
1
0
0
0
0
1
1
1
0
1
1
36
34
39
45
31
32
2D
41
6
4
9
E
1
2
——
A
0
0
0
0
0
0
0
0
×
1
0
1
0
0
0
0
0
×
0
1
0
1
1
1
1
1
×
0
1
0
0
0
0
1
0
×
0
0
0
0
0
0
0
0
×
0
1
0
0
0
0
0
0
×
1
1
1
0
0
0
0
0
×
0
0
0
0
0
0
0
0
×
42
36
42
20
20
20
30
20
××
B
6
B
(Space)
(Space)
(Space)
Initial
(Space)
Year code
(BCD)*
4
Week code
(BCD)*
4
86
87
88
89
90
91
92
93
94
Manufacturing date
×
×
×
×
×
×
×
×
××
95 to 98 Assembly serial number
99 to
125
126
Intel specification frequency
127
Intel specification CE#
latency support
(-A6B)
(-B6B)
*
6
—
—
0
1
Manufacturer specific data
—
—
1
0
—
—
1
0
—
—
0
0
—
—
0
0
—
—
1
1
—
—
0
1
—
—
0
1
——
*
5
64
87
100 MHz
CL = 2/3
1
0
0
0
0
1
0
1
85
CL = 3
Byte
No.
Function described
Bit
7
Bit
6
Bit
5
Bit
4
Bit
3
Bit
2
Bit
1
Bit
0
Hex val-
ue
Comments
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| HB52F649E1 | 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52E649E12-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649E12-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649EN-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus |
| HB52E649EN-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus |
| HB52E88EM-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
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