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參數(shù)資料
| 型號(hào)： | HB52E649E12 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM) |
| 中文描述： | 注冊(cè)使用512 MB SDRAM的內(nèi)存（512 MB的寄存同步的DRAM內(nèi)存） |
| 文件頁(yè)數(shù)： | 4/18頁(yè) |
| 文件大?。?/td> | 541K |
| 代理商： | HB52E649E12 |
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HB52E649E12-A6B/B6B
4
Note: 1.
REGE is the Register Enable pin which permits the DIMM to operate in “buffered” mode and
“registered” mode. To conform to this specification, mother boards must pull this pin to high state
(“registerd” mode).
Serial PD Matrix*
1
V
CC
V
SS
NC
Primary positive power supply
Ground
No connection
Byte
No.
0
Function described
Number of bytes used by
module manufacturer
Total SPD memory size
Memory type
Number of row addresses bits
Number of column addresses
bits
Number of banks
Module data width
Module data width (continued)
Module interface signal levels
SDRAM cycle time
(highest CE latency)
10 ns
SDRAM access from Clock
(highest CE latency)
6 ns
Module configuration type
Refresh rate/type
Bit
7
1
Bit
6
0
Bit
5
0
Bit
4
0
Bit
3
0
Bit
2
0
Bit
1
0
Bit
0
0
Hex val-
ue
80
Comments
128
1
2
3
4
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
1
1
0
1
1
0
0
0
0
1
0
0
1
1
08
04
0D
0B
256 byte
SDRAM
13
11
5
6
7
8
9
0
0
0
0
1
0
1
0
0
0
0
0
0
0
1
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
1
0
01
48
00
01
A0
1
72 bit
0 (+)
LVTTL
CL = 3
10
0
1
1
0
0
0
0
0
60
*
7
11
12
0
1
0
0
0
0
0
0
0
0
0
0
1
1
0
0
02
82
ECC
Normal
(7.8125
μμ
s)
Self refresh
64M
×
4
×
4
1 CLK
13
14
15
SDRAM width
Error checking SDRAM width
SDRAM device attributes:
minimum clock delay for back-
to-back random column
addresses
SDRAM device attributes:
Burst lengths supported
SDRAM device attributes:
number of banks on SDRAM
device
SDRAM device attributes:
CE latency
(-A6B)
(-B6B)
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
0
0
0
0
0
0
1
04
04
01
16
0
0
0
0
1
1
1
1
0F
1, 2, 4, 8
17
0
0
0
0
0
1
0
0
04
4
18
0
0
0
0
0
1
1
0
06
2/3
0
0
0
0
0
1
0
0
04
3
Pin name
Function
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52F169E1 | 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM) |
| HB52F649E1 | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM |
| HB52F649E1-75B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM |
| HB52F649E1 | 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM) |
| HB52F88EM | 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52E649E12-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649E12-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649EN-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus |
| HB52E649EN-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus |
| HB52E88EM-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
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