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參數(shù)資料
| 型號(hào)： | HB52E649E12 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM) |
| 中文描述： | 注冊(cè)使用512 MB SDRAM的內(nèi)存（512 MB的寄存同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 14/18頁 |
| 文件大小： | 541K |
| 代理商： | HB52E649E12 |
HB52E649E12-A6B/B6B
14
Relationship Between Frequency and Minimum Latency
Notes: 1. I
RCD
to I
RRD
are recommended value.
2. Be valid [DSEL] or [NOP] at next command of self refresh exit.
3. Except [DSEL] and [NOP]
Parameter
Frequency (MHz)
t
CK
(ns)
Active command to column command (same bank)
Active command to active command (same bank)
HITA-
CHI
Symbol
I
RCD
I
RC
PC100
Symbol
HB52E649E12
-A6B/B6B
10
2
7
Notes
1
= [I
RAS
+ I
RP
]
1
1
1
1
Active command to precharge command (same bank) I
RAS
Precharge command to active command (same bank) I
RP
Write recovery or data-in to precharge command
(same bank)
Active command to active command (different bank)
Self refresh exit time
Last data in to active command
(Auto precharge, same bank)
Self refresh exit to command input
5
2
1
I
DPL
Tdpl
I
RRD
I
SREX
I
APW
2
2
3
1
2
= [I
DPL
+ I
RP
]
Tsrx
Tdal
I
SEC
7
= [I
RC
]
3
Precharge command to high impedance
(CE latency = 3)
(CE latency = 4)
Last data out to active command (auto precharge)
(same bank)
Last data out to precharge (early precharge)
(CE latency = 3)
(CE latency = 4)
Column command to column command
Write command to data in latency
DQMB to data in
DQMB to data out
CKE to CK disable
Register set to active command
S to command disable
Power down exit to command input
I
HZP
I
HZP
I
APR
Troh
Troh
3
4
0
I
EP
––2
I
EP
I
CCD
I
WCD
I
DID
I
DOD
I
CLE
I
RSA
I
CDD
I
PEC
––3
1
1
1
3
2
1
0
1
Tccd
Tdwd
Tdqm
Tdqz
Tcke
Tmrd
t
T
2.4 V
0.4 V0.8 V
2.0 V
input
t
T
DQ
CL
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52E649E12-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649E12-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649EN-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus |
| HB52E649EN-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus |
| HB52E88EM-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
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