參數(shù)資料
型號(hào)： H2N5087
廠商： HSMC CORP.
英文描述： PNP EPITAXIAL PLANAR TRANSISTOR
中文描述： 進(jìn)步黨外延平面晶體管
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 39K
代理商： H2N5087
HI-SINCERITY
MICROELECTRONICS CORP.
H2N5087
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6210-A
Issued Date : 1998.02.01
Revised Date : 2000.09.15
Page No. : 1/4
HSMC Product Specification
Description
This device was designed for low noise,high gain,general purpose
amplifier applications for 1uA to 25mA collector current.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ....................................................................................... -50 V
VCEO Collector to Emitter Voltage.................................................................................... -50 V
VEBO Emitter to Base Voltage ............................................................................................ -3 V
IC Collector Current......................................................................................................... -50mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
-50
-50
-3
-
-
-
-
250
250
250
40
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-50
-50
-0.3
-0.85
800
-
-
-
4.0
Unit
V
V
V
nA
nA
V
V
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-35V
VEB=-3V
IC=-10mA, IB=-1mA
IC=-10mA, IB=-5V
VCE=-5V, IC=-0.1mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
IC=-0.5mA, VCE=-5V, f=100MHz
VCB=-5V, f=1MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
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