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參數(shù)資料
| 型號： | H2N5366 |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進(jìn)步黨外延平面晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 35K |
| 代理商： | H2N5366 |
HI-SINCERITY
MICROELECTRONICS CORP.
H2N5366
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6275-A
Issued Date : 1999.02.01
Revised Date : 2000.09.15
Page No. : 1/3
HSMC Product Specification
Description
The H2N5366 is designed for general purpose applications requiring
high breakdown voltages.
Features
This device was designed for use as general purpose amplifier and switches.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 400 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ....................................................................................... -40 V
VCEO Collector to Emitter Voltage.................................................................................... -40 V
VEBO Emitter to Base Voltage ............................................................................................ -4 V
IC Collector Current...................................................................................................... -500 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
-40
-40
-4
-
-
-
-
-
-
80
100
40
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-250
-1
-1.1
-2
-
-
-
-
10
Unit
V
V
V
nA
nA
mV
V
V
V
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-45V, IE=0
VEB=-3V. IC=0
IC=-50mA, IB=-5mA
IC=-300mA, IB=-30mA
IC=-50mA, IB=-5mA
IC=-300mA, IB=-30mA
VCE=-1V, IC=-2mA
VCE=-1V, IC=-50mA
VCE=-5V, IC=-300mA
VCE=-10V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
PF
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| H2N6426 | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
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