參數(shù)資料
型號： H2N5401
廠商： HSMC CORP.
英文描述： PNP EPITAXIAL PLANAR TRANSISTOR
中文描述： 進步黨外延平面晶體管
文件頁數(shù)： 1/4頁
文件大?。?/td> 38K
代理商： H2N5401
HI-SINCERITY
MICROELECTRONICS CORP.
H2N5401
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6203
Issued Date : 1992.09.22
Revised Date : 2002.02.20
Page No. : 1/4
H2N5401
HSMC Product Specification
Description
The H2N5401 is designed for general purpose applications requiring
high breakdown voltages.
Features
Complements to NPN Type H2N5551
High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA))
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage...................................................................................... -160 V
VCEO Collector to Emitter Voltage................................................................................... -150 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current....................................................................................................... -600 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
-160
-150
-5
-
-
-
-
-
-
50
80
50
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
160
-
-
-
Max.
-
-
-
-50
-50
-0.2
-0.5
-1
-1
-
400
-
300
6
Unit
V
V
V
nA
nA
V
V
V
V
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-120V, IE=0
VEB=-3V. IC=0
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
VCE=-10V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification of hFE2
Rank
Range
A
N
C
80-200
100-240
160-400
TO-92
相關(guān)PDF資料
PDF描述
H2N5551 NPN EPITAXIAL PLANAR TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
H2N5551 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR
H2N6388 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR
H2N6426 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR
H2N6427 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR
H2N6517 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR
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