參數(shù)資料
型號： H2N5551
廠商： HSMC CORP.
英文描述： NPN EPITAXIAL PLANAR TRANSISTOR
中文描述： 瑞展晶體管
文件頁數(shù)： 1/4頁
文件大?。?/td> 37K
代理商： H2N5551
HI-SINCERITY
MICROELECTRONICS CORP.
H2N5551
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6219
Issued Date : 1992.09.21
Revised Date : 2002.02.20
Page No. : 1/4
H2N5551
HSMC Product Specification
Description
The H2N5551 is designed for amplifier transistor.
Features
Complements to PNP Type H2N5401
High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA))
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage....................................................................................... 180 V
VCEO Collector to Emitter Voltage.................................................................................... 160 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current ....................................................................................................... 600 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
180
160
6
-
-
-
-
-
-
80
80
50
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
160
-
-
-
Max.
-
-
-
50
50
0.15
0.2
1
1
-
400
-
300
6
Unit
V
V
V
nA
nA
V
V
V
V
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=120V, IE=0
VEB=4V, IC=0
IC=10mA, IB=1.0mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification of hFE2
Rank
Range
A
N
C
80-200
100-250
160-400
TO-92
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