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參數(shù)資料
| 型號： | H2N5088 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 35K |
| 代理商： | H2N5088 |
HI-SINCERITY
MICROELECTRONICS CORP.
H2N5088
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6227-B
Issued Date : 1993.04.12
Revised Date : 2000.09.15
Page No. : 1/3
HSMC Product Specification
Description
This device was designed for low noise, high gain , general purpose
amplifier applications for 1uA to 25mA collector current.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 350 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ........................................................................................ 35 V
VCEO Collector to Emitter Voltage..................................................................................... 30 V
VEBO Emitter to Base Voltage .......................................................................................... 4.5 V
IC Collector Current......................................................................................................... 50 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
35
30
4.5
-
-
-
-
300
350
300
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
0.5
0.8
900
-
-
-
4.0
Unit
V
V
V
nA
nA
V
V
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=20V, IE=0
VEB=3V, IC=0
IC=10mA, IB=1mA
IC=10mA, IB=5V
VCE=5V, IC=0.1mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=0.5mA, f=100MHz
VCB=5V, f=1MHz, IE=0
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
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