參數(shù)資料
型號： H2N4403
廠商： HSMC CORP.
英文描述： PNP EPITAXIAL PLANAR TRANSISTOR
中文描述： 進步黨外延平面晶體管
文件頁數(shù)： 1/4頁
文件大小： 40K
代理商： H2N4403
HI-SINCERITY
MICROELECTRONICS CORP.
H2N4403
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6221
Issued Date : 1992.09.30
Revised Date : 2002.02.22
Page No. : 1/4
H2N4403
HSMC Product Specification
Description
The H2N4403 is designed for general purpose switching and amplifier
applications.
Features
Complementary to H2N4401
High Power Dissipation : 625mW at 25
°
C
High DC Current Gain : 100-300 at 150mA
High Breakdown Voltage : 40V Min.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150
°
C
Junction Temperature ................................................................................................ +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................................. 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage.................................................................................................... -40 V
VCEO Collector to Emitter Voltage ................................................................................................ -40 V
VEBO Emitter to Base Voltage......................................................................................................... -5 V
IC Collector Current.................................................................................................................. -600 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
-40
-40
-5
-
-
-
-750
-
30
60
100
100
20
200
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-400
-750
-950
-1.3
-
-
-
300
-
-
8.5
Unit
V
V
V
nA
mV
mV
mV
V
Test Conditions
IC=-100uA, IE=0
IC=-1mA. IB=0
IE=-10uA, IC=0
VCE=-35V, VBE=-0.4V
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
VCE=-1V, IC=-0.1mA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-2V, IC=-150mA
VCE=-2V, IC=-500mA
IC=-20mA, VCE=-10V, f=100MHz
VCE=-10V, IE=0, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
PF
Classification of hFE4
Rank
Range
A
B
100-210
190-300
TO-92
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